Anderson localization in carbon nanotubes: defect density and temperature effects

Physical Review Letters 95, 266801 - 4 (2005)

Anderson localization in carbon nanotubes: defect density and temperature effects

B. Biel, F.J. Garcia-Vidal, A. Rubio, F.Flores

The role of irradiation induced defects and temperature in the conducting properties of singlewalled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15−65K, are enough to smooth out the local fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

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arxiv
http://arxiv.org/abs/cond-mat/0511265

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