Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

Physical Review Research 2, 022025(R) (2020)

Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

Shiqiao Du, Peizhe Tang, Jiaheng Li, Zuzhang Lin, Yong Xu, Wenhui Duan, Angel Rubio

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi2Te4 thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi2Te4 thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.

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S.D., J.L., Z.L., Y.X., and W.D. acknowledge financial supports from the Basic Science Center Project of NSFC (Grant No. 51788104), the Ministry of Science and Technology of China (Grants No. 2016YFA0301001, No. 2018YFA0307100, and No. 2018YFA0305603), the National Natural Science Foundation of China (Grants No. 11674188 and No. 11874035), and the Beijing Advanced Innovation Center for Future Chip (ICFC). A.R. and P.T. acknowledge financial supports from the European Research Council (ERC-2015-AdG-694097). P.T. acknowledges the received funding from the European Union Horizon 2020 research and innovation programme 793609. The Flatiron Institute is a division of the Simons Foundation.

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