Defects Identified in SiC and Their Implications

Silicon Carbide and Related Materials 2007, Book Series: Materials Science Forum, Vol. 600 (2009)

Defects Identified in SiC and Their Implications

M Bockstedte, A. Marini, A. Gali, O. Pankratov, A. Rubio

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of V-C(+).

Additional Information

Preprint - 143.86 KB

Related Projects

Related Research Areas