Floquet Engineering of Magnetism in Topological Insulator Thin Films
(submitted), (2021)
Floquet Engineering of Magnetism in Topological Insulator Thin Films
Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition, the magnetically doped topological insulator thin film also undergoes a magnetic phase transition from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials
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- arxiv
- http://arxiv.org/abs/2106.06977
- Notes
- X. L. and W. D. acknowledge financial supports from the Ministry of Science and Technology of China (Grant No. 2016YFA0301001), the National Natural Science Foundation of China (Grant No. 11674188), and the Beijing Advanced Innovation Center for Future Chip(ICFC). A. R., H. H., and U. D. G. acknowledge financial supports from the European Research Council (ERC- 2015-AdG-694097). P. T. acknowledges the received funding from the European Union Horizon 2020 research and innovation programme under the Marie Sklodowska- Curie grant agreement No 793609. The Flatiron Institute is a division of the Simons Foundation.
Related Projects
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, New York
- MPSD-Max-Planck Hamburg