TiS3 Transistors with Tailored Morphology and Electrical Properties

Advanced Materials 27, 2595 - 2601 (2015)

TiS3 Transistors with Tailored Morphology and Electrical Properties

Joshua O. Island, Mariam Barawi, Robert Biele, Adrián Almazán, José M. Clamagirand, José R. Ares, Carlos Sánchez, Herre S. J. van der Zant, José V. Álvarez, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

Additional Information

Doi
http://dx.doi.org/10.1002/adma.201405632

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